Bonding of Se and ZnSe to the Si(100) surface
- 15 June 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 39 (17) , 12985-12988
- https://doi.org/10.1103/physrevb.39.12985
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Ultraviolet–ozone cleaning of silicon surfaces studied by Auger spectroscopyJournal of Vacuum Science & Technology B, 1989
- Chemisorption of sulfur on Ge(100)Surface Science, 1988
- Surface-bonding geometry of (2×1)S/Ge(001) by the normal-emission angle-resolved photoemission extended-fine-structure techniquePhysical Review B, 1988
- Interface formation of GaAs with Si(100), Si(111), and Ge(111): Core-level spectroscopy for monolayer coverages of GaAs, Ga, and AsPhysical Review B, 1987
- Photoemission surface core-level study of sulfur adsorption on Ge(100)Physical Review B, 1987
- Electronic structure, atomic structure, and the passivated nature of the arsenic-terminated Si(111) surfacePhysical Review B, 1987
- Arsenic overlayer on Si(111): Removal of surface reconstructionPhysical Review B, 1986
- Symmetric arsenic dimers on the Si(100) surfacePhysical Review Letters, 1986
- Arsenic-terminated Ge(111): An ideal 1×1 surfacePhysical Review Letters, 1985
- The adsorption of sulfur on the (100) and (111) faces of platinum; A LEED and AES studySurface Science, 1975