E.S.R. spectra of SiF3radicals produced in a single crystal of SiF4

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Abstract
E.S.R. spectra of a γ-irradiated single crystal of SiF4 were investigated. The spectra observed were attributed to SiF3 radicals having 28Si (I=0) and 29Si (I=1/2) atoms. From the angular dependence of the spectral lines on rotation of the single crystal, hyperfine tensors were determined for three fluorine atoms and the 29Si atom of the SiF3 radical. The three fluorine atoms in the radical are equivalent, whereas the directions of their hyperfine tensors are different from one another owing to the pyramidal structure of the radical. In addition to the hyperfine analysis, the analysis of the superhyperfine structure due to neighbouring fluorine atoms gave information on the orientation of the radicals in the crystal and the mechanism of radical formation. The structure of the radical is discussed in comparison with that of the CF3 radical.