Contact effects on silicon surface flashover studies

24 August 2005

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 358-361
https://doi.org/10.1109/ppc.1989.767497

Abstract

We studied the breakdown of n/sup +/nn/sup +/ silicon devices in vacuum and various dielectric fluids. The breakdown voltage exhibited a dependence on the abruptness of the high-low junction and on the dielectric constant of the surrounding dielectric liquid.

Keywords

FLASHOVER
ELECTRIC BREAKDOWN
CURRENT DENSITY
ELECTRONS
ANODES
DIELECTRIC CONSTANT
VACUUM BREAKDOWN
SILICON DEVICES
SURFACE RESISTANCE
OPTICAL SWITCHES

This publication has 2 references indexed in Scilit:

Photon emission from reverse-biased silicon P-N junctions
Solid-State Electronics, 1988
Avalanche Injection in Semiconductors
Proceedings of the Physical Society. Section B, 1956