Electrodeposited CdTe—optical properties

Publisher Website
Google Scholar
Abstract
For the measurement of optical constants, the electrodeposited films of CdTe were lifted off their opaque substrates and transferred onto glass slides using a transparent liquid adhesive. This technique proved to give results more reliable than those obtained on samples in which CdTe is deposited on CdS-coated conducting glass. The measured optical dispersion in the photon energy range of E<1.5 eV is in excellent agreement with that for the single crystal. The optical absorption coefficient was determined in the E<3.5 eV range and was compared with that for the single crystal. The results revealed two direct allowed transitions at 1.50 eV [Γ8 valence band(VB)→Γ6 conduction band(CB)] and 2.43 eV [Γ7(VB)→Γ6(CB)] and three indirect allowed transitions at 1.27 eV [L4,5(VB)→Γd], 1.83 eV [L6(VB)→Γd], and 2.84 eV [Γ8(VB)→L6(CB)]. The 1.27 and the 1.83 eV transitions, which have not been reported previously and were not detected in single-crystal data, are attributed to the transitions to a grain-boundary-related defect energy band Γd, 0.65 eV above Γ8 (VB). The indirect transitions at 1.83 and 2.84 eV are assisted by phonons having energies of 80 and 84 meV, respectively.