Vapor phase epitaxy of InP using flow modulation
- 8 September 1986
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (10) , 564-566
- https://doi.org/10.1063/1.97096
Abstract
We report the first preparation of indium phosphide using flow modulation techniques in the hydride vapor phase epitaxial system. A conventional single barrel reactor was used. Layer growth rates as low as 25 Å/cycle were demonstrated. Room‐temperature carrier concentrations for the unintentionally doped InP of 5×1015 cm−3 and electron mobilities of 3650 cm2/V s were achieved.Keywords
This publication has 3 references indexed in Scilit:
- Advanced multilayer epitaxial structuresJournal of Crystal Growth, 1983
- Defect centers in high purity hydride VPE indium phosphideJournal of Crystal Growth, 1983
- The Chemical Vapor Deposition of Polycrystalline InPJournal of the Electrochemical Society, 1980