Theoretical Study of the Heats of Formation of Small Silicon-Containing Compounds

This publication has 51 references indexed in Scilit:

• Gaussian-3 (G3) theory for molecules containing first and second-row atoms
  The Journal of Chemical Physics, 1998
• Relativistic effects in silicon chemistry: Are the experimental heats of formation of the silicon atom and SiH4 compatible?
  The Journal of Chemical Physics, 1998
• Accurate Heats of Formation for SiF_n and SiF_n⁺, for n = 1−4
  The Journal of Physical Chemistry A, 1998
• Gaussian basis sets for use in correlated molecular calculations. VI. Sextuple zeta correlation consistent basis sets for boron through neon
  Journal of Molecular Structure: THEOCHEM, 1996
• Thermochemistry of CHn, SiHn (n=0–4), and the cations SiH+, SiH2+, and SiH3+: A converged quantum mechanical approach
  The Journal of Chemical Physics, 1992
• Electron affinities of the first-row atoms revisited. Systematic basis sets and wave functions
  The Journal of Chemical Physics, 1992
• Relativistic all-electron molecular Hartree-Fock-Dirac-(Breit) calculations on CH4, SiH4, GeH4, SnH4, PbH4
  Theoretical Chemistry Accounts, 1992
• Gaussian basis sets for use in correlated molecular calculations. I. The atoms boron through neon and hydrogen
  The Journal of Chemical Physics, 1989
• Thermodynamic Properties of Iron and Silicon
  Journal of Physical and Chemical Reference Data, 1986
• THE HEATS OF FORMATION OF SOME UNSTABLE GASEOUS HYDRIDES¹
  The Journal of Physical Chemistry, 1961