Ni/quartz adhesion enhancement: Comparison of Ar+ and Si+ ion mixing

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Abstract
The adhesion between 30 nm Ni films and quartz substrates was examined as a function of the interfacial chemistry and mixing induced by low temperature (<100 °C) 40Ar+ and 28Si+ ion mixing. The Ni/quartz specimens were implanted with either 65 keV 40Ar+ or 55 keV 28Si+ to doses between 1 and 10×1016 atom/cm2. Both types of implants were observed to induce extensive interfacial grading. X-ray photoelectron spectroscopy analyses indicated that Ni–O–Si types of interfacial complexes were present in the as-deposited specimens, but that these complexes were eliminated by the 40Ar+ ion mixing. In contrast, high dose 28Si+ ion mixing was shown to induce the formation of new interfacial complexes (Ni–Si–O and new Ni–O–Si complexes). Adhesion measurements, performed using a scratch tester, indicated that the adhesion of the as-deposited specimens was good (20 N), but that this adhesion got progressively worse (to less than 1 N) with 40Ar+ implantation. In the case of 28Si+ ion mixing, adhesion was reduced (to 5 N) in the low dose specimens, but was substantially increased (to 45 N) in the high dose specimens. Overall, Ni/quartz adhesion was shown to correlate with the concentration of interfacial complexes that could chemically attach the Ni films and quartz substrates.

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