On the SiOx transition layer in abrupt Si-SiO2 chemical interface in MOS structures
- 1 February 1989
- journal article
- Published by Elsevier in Surface Science
- Vol. 208 (3) , 463-472
- https://doi.org/10.1016/0039-6028(89)90013-7
Abstract
No abstract availableKeywords
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