Abstract
A new SiO oblique evaporation procedure for high-tilt-angle nematic liquid crystal alignment with no organic surfactants and no dopants is proposed. It covers a wide tilt range of 0° to 60° with respect to the substrate normal. In the procedure the azimuth of SiO beam changes continuously during evaporation, although the incident angle does not change. By choosing the azimuthal distribution of deposition, the tilt bias of the director can be controlled. The aligning layers are heatproof and should be of use in producing improved positive-type guest-host display devices.