Model of plasma immersion ion implantation
- 1 October 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (7) , 2926-2929
- https://doi.org/10.1063/1.344172
Abstract
In plasma immersion ion implantation, a target is immersed in a plasma and a series of negative high-voltage pulses are applied to implant plasma ions into the target. We develop an approximate analytical model to determine the time-varying implantation current, the total dose, and the energy distribution of the implanted ions.This publication has 8 references indexed in Scilit:
- Plasma source ion implantation dose uniformity of a 2×2 array of spherical targetsJournal of Applied Physics, 1989
- Ion-matrix sheath structure around cathodes of complex shapeJournal of Physics D: Applied Physics, 1989
- Plasma immersion ion implantation using plasmas generated by radio frequency techniquesApplied Physics Letters, 1988
- Plasma source ion-implantation technique for surface modification of materialsJournal of Applied Physics, 1987
- Sheath thickness and potential profiles of ion-matrix sheaths for cylindrical and spherical electrodesJournal of Applied Physics, 1987
- Theory and numerical solutions for sheath growth in a low-pressure plasmaJournal of Plasma Physics, 1971
- Ion Acoustic Wave Excitation and Ion Sheath EvolutionPhysics of Fluids, 1970
- Theory of a thick dynamic positive-ion sheathJournal of Plasma Physics, 1969