SiC buried layer formation by ion beam synthesis at 950 °C

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Abstract
Carbonimplantation into Si at a temperature of 950 °C and at doses in the range of 0.2×1018 to 1×1018 cm−2 at 200 keV results in the formation of β‐SiC buried layers having the same orientation as the Si matrix. Under these conditions redistribution of the implanted species occurs enabling the formation of a buried layer of β‐SiC with an overlayer of high quality single crystal Si which is free of structuraldefects. The quality of the Si overlayer and the β‐SiC buried layer was investigated by Rutherford backscattering and transmission electron microscopy. A mechanism for the formation of the β‐SiC without the generation of defects in the Si matrix is proposed.

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