Plasma Cleaning by Use of Hollow-Cathode Discharge in a CHF3-SiO2 Dry-Etching System

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Abstract
Plasma cleaning by use of hollow-cathode discharge, where RF voltage was supplied with the same phase on both electrodes, was investigated in a CHF3-SiO2 parallel-plate-type dry-etching system. The plasma cleaning by use of the hollow-cathode discharge has achieved a high plasma-cleaning rate, because the electrons were confined by the opposite ion sheaths' electric field and high-density plasma was generated between the electrodes. With the heating of the reaction chamber wall, the plasma-cleaning rate was increased and the deposition rate of the plasma-polymer was decreased. The temperature of the reaction chamber wall was found to be one of the important parameters affecting the etching characteristics, such as the SiO2/poly-Si selectivity.