Negative Resistance Arising from Transit Time in Semiconductor Diodes
- 29 July 1954
- journal article
- website
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Bell System Technical Journal
- Vol. 33 (4) , 799-826
- https://doi.org/10.1002/j.1538-7305.1954.tb03742.x
Abstract
The structural simplicity of two-terminal compared to three-terminal devices indicates the potential importance of two terminal devices employing semiconductors and having negative resistance at frequencies properly related to the transit time of car...This publication has 6 references indexed in Scilit:
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- Mobility of Holes and Electrons in High Electric FieldsPhysical Review B, 1953
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- Transistor Electronics: Imperfections, Unipolar and Analog TransistorsProceedings of the IRE, 1952