Temperature shift of the absorption edge in mixed single crystals ofSe
- 15 July 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 36 (2) , 1174-1177
- https://doi.org/10.1103/physrevb.36.1174
Abstract
The thermal dependence of the absorption-edge shift has been measured in mixed single crystals of Se, in the temperature range 13–300 K. The experimental results support the argument that the energy gap shift is caused by an internal Franz-Keldysh effect which results from electric fields induced by phonons. However, the exact dependences of the energy gap shift and the increase in the absorption coefficient on the electric fields differ from those calculated by Franz and Keldysh, because of final-state interaction correction. It is shown that in mixed single crystals of Se, as well as in other single crystals of pure II-VI compounds, the electric fields which determine the thermal shift of the absorption edge are dominated by the LO-phonon-induced electric fields.
Keywords
This publication has 8 references indexed in Scilit:
- Urbach rule in mixed single crystals ofSePhysical Review B, 1987
- Interband light absorption by a semiconductor in a pulsing electric fieldOptics Communications, 1983
- Experimental Test of Theoretical Models for Urbach's Rule at Excitonic Absorption EdgesPhysical Review Letters, 1980
- Materials And Their Properties As They Apply To Electroabsorptive DevicesOptical Engineering, 1978
- Phonon-generated microfields and temperature dependence of the absorption edge in II-VI compoundsPhysical Review B, 1975
- Toward a Unified Theory of Urbach's Rule and Exponential Absorption EdgesPhysical Review B, 1972
- Urbach rulePhysica Status Solidi (a), 1971
- Einfluß eines elektrischen Feldes auf eine optische AbsorptionskanteZeitschrift für Naturforschung A, 1958