The impurity resistivity of In-doped CdS
- 10 June 1980
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 13 (16) , L427-L431
- https://doi.org/10.1088/0022-3719/13/16/004
Abstract
The author has investigated further the previously developed theory of Matsubara and Toyozawa (see Prog. Theor. Phys., vol.26, p.739, 1961) for impurity bands in doped semiconductors by including the effect of correlation via an alternant molecular orbital (AMO) method in order to calculate the impurity resistivity of CdS:In. Good agreement with experimental data is found.Keywords
This publication has 12 references indexed in Scilit:
- Cluster Model of Impurity States in Doped SemiconductorsProgress of Theoretical Physics, 1979
- Matrix elements in the Matsubara‐Toyozawa theory of impurity bandPhysica Status Solidi (b), 1978
- The impurity conductivities of Si:P, Ge:Sb and CdS:ClJournal of Physics C: Solid State Physics, 1978
- Universality aspects of the metal-nonmetal transition in condensed mediaPhysical Review B, 1978
- Electronic Structure of Liquid Metals in the Tight-Binding Approximation. IProgress of Theoretical Physics, 1973
- Electron correlations in narrow energy bands III. An improved solutionProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1964
- Electron correlations in narrow energy bandsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1963
- Theory of Impurity Band Conduction in SemiconductorsProgress of Theoretical Physics, 1961
- Absence of Diffusion in Certain Random LatticesPhysical Review B, 1958
- Statistical-Mechanical Theory of Irreversible Processes. I. General Theory and Simple Applications to Magnetic and Conduction ProblemsJournal of the Physics Society Japan, 1957