Abstract
The study of the electronic relaxation of 3d and 4f impurities in metals by means of their slow-relaxation Mössbauer spectra is reviewed. We emphasize especially the effect of ionic-type splittings, such as crystal-field splittings of 4 f impurities ; and the effects of slow intraconfigurational rearrangement in Mössbauer source spectra. The information obtainable from the Mössbauer method is compared with that obtainable from EPR

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