Energy band discontinuities in heterojunctions measured by internal photoemission
- 3 August 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 174 (1-3) , 318-319
- https://doi.org/10.1016/0039-6028(86)90428-0
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Energy band alignment in GaAs:(Al,Ga)As heterostructures: The dependence on alloy compositionJournal of Applied Physics, 1986
- Negative charge, barrier heights, and the conduction-band discontinuity in AlxGa1−xAs capacitorsJournal of Applied Physics, 1985
- Comprehensive analysis of Si-doped (): Theory and experimentsPhysical Review B, 1984
- Quantum States of Confined Carriers in Very Thin -GaAs- HeterostructuresPhysical Review Letters, 1974