Electron Microscope Study of Radiation Damage in Bismuth Ion-Implanted Cds
- 1 May 1971
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 42 (6) , 2476-2481
- https://doi.org/10.1063/1.1660565
Abstract
Electron microscopy has been used to study the ion‐fluence dependence of structural disorder in CdS single‐crystal platelets following 25‐keV bismuth implantations at room temperature in the dose range of 7×1015−3.2×1016 ions/cm2. Bright‐field photomicrographs revealed ``black spots'' ∼100 Å in diameter in the CdS microstructure. The contrast behavior of the strain field surrounding these spots indicated that the majority of spots were interstitial clusters or unresolvable interstitial dislocation loops. The electron diffraction patterns did not show any evidence of amorphous zones in the implanted specimens and there was no indication of a second‐phase precipitate.This publication has 7 references indexed in Scilit:
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