Dispersion of the Piezobirefringence of GaAs
- 1 November 1968
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 39 (12) , 5597-5599
- https://doi.org/10.1063/1.1656021
Abstract
The piezobirefringence of GaAs shows a large anomalous dispersion near the absorption edge and exhibits a nonlinear stress dependence. The coefficient π11–π12 reverses sign. Lowering the temperature from 298° to 77°K shifts the dispersion curves +0.088 eV, which is approximately equal to the shift of the energy gap with temperature. These effects, which have not been observed previously in GaAs, are related to the stress dependence of transitions associated with the absorption edge and resonance photoelasticity described by Kaplyanskii and Lozovskaya.This publication has 15 references indexed in Scilit:
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