An atomistic model for stepped diamond growth
- 1 December 1994
- journal article
- Published by Springer Nature in Nature
- Vol. 372 (6506) , 535-537
- https://doi.org/10.1038/372535a0
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Elementary Reaction Mechanism for Growth of Diamond (100) Surfaces from Methyl RadicalsThe Journal of Physical Chemistry, 1994
- Step motion, patterns, and kinetic instabilities on crystal surfacesPhysical Review Letters, 1994
- Elementary reaction mechanism of diamond growth from acetyleneThe Journal of Physical Chemistry, 1994
- Analysis of diamond growth in subatmospheric dc plasma-gun reactorsJournal of Applied Physics, 1993
- Growth on the reconstructed diamond (100) surfaceThe Journal of Physical Chemistry, 1993
- Process study of thermal plasma chemical vapor deposition of diamond, part II: Pressure dependence and effect of substrate pretreatmentPlasma Chemistry and Plasma Processing, 1992
- Evaluation of the surface structure of diamond films prepared in a combustion flame by surface-enhanced Raman scatteringApplied Physics Letters, 1992
- Size Dependence of Morphology of Diamond Surfaces Prepared by DC Arc Plasma Jet Chemical Vapor DepositionJapanese Journal of Applied Physics, 1992
- A microscopic kinetic theory of crystal growthJournal of Crystal Growth, 1989
- Optimization of parameters for semiempirical methods I. MethodJournal of Computational Chemistry, 1989