Structural properties of Ga2O3(Gd2O3)–GaAs interfaces
- 1 May 1998
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 16 (3) , 1395-1397
- https://doi.org/10.1116/1.590082
Abstract
[[abstract]]Ga2O3(Gd2O3)–GaAs heterostructures in situ fabricated using a multichamber ultrahigh vacuum (molecular beam epitaxy) system were studied by x-ray reflectivity measurement and high-resolution transmission electron microscopy. The oxide–GaAs interfaces were found to be very smooth with the roughness no more than 1 nm. Moreover, an interfacial roughness as small as one atomic layer of GaAs (0.33 nm) was observed using x-ray reflectivity.[[fileno]]2030161010071[[department]]電機工程學Keywords
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