Susceptor and proximity rapid thermal annealing of carbon-implanted InP

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Abstract
AuGe contacts to n‐type layers formed by carbon implantation into semi‐insulating InP substrates demonstrate superior performance on material activated by annealing within an enclosed SiC‐coated graphite susceptor (700 °C, 10 s), compared to the more conventional proximity approach. This superiority is due to the better substrate surface morphology achieved. Activating the implants within the graphite susceptor eliminates P outdiffusion and formation of pits. In addition, annealing within the susceptor provides much better protection against edge degradation and slip formation.

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