New Oxygen Infrared Bands in Annealed Irradiated Silicon

Infrared and electron-spin-resonance measurements on the recovery of silicon irradiated with 1.5-MeV electrons are presented. In the infrared measurements the disappearance of the previously reported 829-${\mathrm{cm}}^{-1\mathrm{}}$ ($12\mu$) oxygen vibration band is followed, and the appearance and subsequent disappearance of a succession of new infrared bands are observed. The major new bands are at 887, 904, 968, and 1000 ${\mathrm{cm}}^{-1\mathrm{}}$, although others are also found. Tentative defect models are proposed to account for these recovery features.