The roles of charged and neutral oxidising species in silicon oxidation from ab initio calculations
Open Access
- 1 April 2000
- journal article
- research article
- Published by Elsevier in Microelectronics Reliability
- Vol. 40 (4-5) , 567-570
- https://doi.org/10.1016/s0026-2714(99)00259-0
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Enhanced silicon oxide film growth on Si (100) using electron impactJournal of Applied Physics, 1997
- Oxidation of crystalline Si in an O2 plasma: Growth kinetics and oxide characterizationJournal of Applied Physics, 1997
- Oxidation of silicon: the VLSI gate dielectricSemiconductor Science and Technology, 1995
- Thermal oxidation of silicon and residual fixed chargeMicroelectronics Journal, 1993
- Image charges and their influence on the growth and the nature of thin oxide filmsPhilosophical Magazine Part B, 1987
- Low-pressure oxidation of silicon stimulated by low-energy electron bombardmentPhilosophical Magazine Part B, 1985
- Transport Number Measurements in SilicaJournal of the Electrochemical Society, 1985
- Electrical Conduction at Elevated Temperatures in Thermally Grown Silicon Dioxide FilmsJournal of the Electrochemical Society, 1973
- General Relationship for the Thermal Oxidation of SiliconJournal of Applied Physics, 1965
- Effect of an Electric Field on Silicon OxidationThe Journal of Chemical Physics, 1962