Velocity saturation effect on short-channel MOS transistor capacitance

1 March 1985

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 6 (3) , 120-122
https://doi.org/10.1109/EDL.1985.26066

Abstract

To analyze short-channel effects of MOS transistor ac characteristics, a two-dimensional device simulator has been used to extract MOS transistor capacitances. The results of simulation and measurements agree quite well. Several causes of short-channel effects are explained by the simulations. Velocity saturation effects are found to play a key role in the gradual increase in Cgd. Also holes in the accumulation region and the two-dimensional effect or the influence of the back-gate field from the drain are important in explaining the short-channel effect of MOS transistor capacitance.

Keywords

MOSFETS
CAPACITANCE
THRESHOLD VOLTAGE
ELECTRODES
GEOMETRY
LABORATORIES
CIRCUIT SIMULATION
ANALYTICAL MODELS
VERY LARGE SCALE INTEGRATION
SOLID MODELING