Optimization of Ti and Co Self-Aligned Silicide RTP for 0.10 μm Cmos

Publisher Website

1 January 1998

journal article
Published by Springer Nature in MRS Proceedings

Vol. 525
https://doi.org/10.1557/proc-525-331

Abstract

No abstract available

Keywords

This publication has 2 references indexed in Scilit:

Modeling of Device Characteristics as Function of Ti Salicide Rapid Thermal Processing Parameters for Deep-Sub-Micron CMOS Technologies
MRS Proceedings, 1996
Reduction of the C54–TiSi2 phase transformation temperature using refractory metal ion implantation
Applied Physics Letters, 1995