Quantum Hall effect in InAs/AlSb quantum wells
- 1 April 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (13) , 1428-1430
- https://doi.org/10.1063/1.105188
Abstract
We demonstrate via low-temperature electron transport measurements the realization of a high-mobility (≳300 000 cm2/V s) two-dimensional electron gas in unintentionally doped InAs/AlSb single 120 Å quantum wells grown on GaAs substrates by molecular beam epitaxy. Magnetoresistance and Hall measurements at T∼0.4 K show a well-formed quantum Hall effect, with effects due to spin splitting observed at filling factors as high as ν=17. The electron densities of these wells could be reduced by a factor ∼5 by using the negative persistent photoconductivity of these samples.Keywords
This publication has 6 references indexed in Scilit:
- Electron concentrations and mobilities in AlSb/InAs/AlSb quantum wellsJournal of Applied Physics, 1989
- Mobility of the two-dimensional electron gas in AlGaAs/GaAs heterostructures at low electron densitiesApplied Physics Letters, 1989
- Heteroepitaxy of InAs quantum wellsJournal of Crystal Growth, 1989
- Electron densities in InAs–AlSb quantum wellsJournal of Vacuum Science & Technology B, 1984
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- Conduction electron spin resonance in InAsPhysics Letters A, 1967