Modification of field emitter array tip shape by focused ion-beam irradiation
- 1 May 1996
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 14 (3) , 1973-1976
- https://doi.org/10.1116/1.588967
Abstract
Tip shapes of Si field emitter arrays, fabricated by a conventional dry etching process, have been modified by focused ion-beam (FIB) irradiation to obtain a sharp cone shape. Flat-topped Si tips could be sharpened by localized sputtering using FIBs for a short time. Tip shape inspections and repairs were also performed using a FIB system combined with an electron-beam column to remove metal residues and melted emitters.Keywords
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