Analysis of excess carrier lifetime in p-type HgCdTe using a three-level Shockley–Read model
- 1 July 1992
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 10 (4) , 1560-1568
- https://doi.org/10.1116/1.586249
Abstract
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