An improved ionized-impurity scattering model for Monte Carlo simulations
- 1 August 1991
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (3) , 1475-1482
- https://doi.org/10.1063/1.349560
Abstract
An improved Monte Carlo model for ionized‐impurity scattering is developed and used to calculate majority‐ and minority‐electron mobilities in silicon. The model includes scattering cross sections derived from phase‐shift analysis, implementation of the Friedel sum rule, and a simple phenomenological model for multiple‐potential scattering. This model provides a very good fit to experiment using a single adjustable parameter. Electron mobilities in n‐ and p‐type Si are calculated and fit to experimental data at 300 and 77 K. Experimental results for Si of μn(NA)/μn(ND) ≊ 2 at 300 K are reproduced and a value of 3 < μn(NA)/μn(ND) < 4 is predicted at 77 K.This publication has 26 references indexed in Scilit:
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