High-speed 1.3 μm InGaAs/GaAs metal-semiconductor-metal photodetector
- 28 January 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (4) , 325-327
- https://doi.org/10.1063/1.104675
Abstract
A high frequency, low dark current, 1.3 μm metal-semiconductor-metal photodetector on GaAs is reported. The measured frequency response of this photodetector up to 10 GHz agrees with a model that assumes different collection times for electrons and holes.Keywords
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