Effect of ion-implantation into thermal SiO2-films on sodium ion drift
- 1 January 1971
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 7 (1-2) , 87-93
- https://doi.org/10.1080/00337577108232567
Abstract
Sodium and nitrogen was implanted at 20 keV and 80 keV into MOS capacitors. The influence of the implantation on sodium ion drift was studied by temperature bias treatments combined with capacitance-voltage measurements. An ion trapping effect at the electrode is observed which is strongly enhanced by 20 keV implantations and the mobile ion content can be completely depleted by repeated drift treatments. 30 keV implantations seem to stabilize the oxide with respect to sodium ion migration but cause traps which exchange carriers with the silicon. All these effects are not attributed to the implanted ions but to the radiation damage.Keywords
This publication has 3 references indexed in Scilit:
- An investigation of instability and charge motion in metal-silicon oxide-silicon structuresIEEE Transactions on Electron Devices, 1966
- Ion Transport Phenomena in Insulating FilmsJournal of Applied Physics, 1965
- Electrochemical Phenomena in Thin Films of Silicon Dioxide on SiliconIBM Journal of Research and Development, 1964