Far-infrared photoconductivity spectra of quenched-in acceptors in Germanium: absorption and photo-thermal ionization lines of two new shallow acceptors
- 31 October 1981
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 40 (2) , 149-153
- https://doi.org/10.1016/0038-1098(81)90156-3
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- A PTIS study of quenched-in acceptors in germaniumSolid State Communications, 1981
- Acceptor complexes in germanium: Systems with tunneling hydrogenPhysical Review B, 1980
- Zeeman effect in the excitation spectra of shallow acceptors in germanium: experimentalJournal of Physics C: Solid State Physics, 1979
- Heat treatment of silicon and the nature of thermally induced donorsJournal of Applied Physics, 1979
- New shallow acceptors produced in germanium by quenchingPhysica Status Solidi (a), 1979
- Existence of Copper Atoms in Quenched Germanium and Their Annealing Effect above 400°CJapanese Journal of Applied Physics, 1978
- Evidence for a contribution to the extrinsic photoconductive signal by hopping through excited states of the donors in silicon and CdTeSolid State Communications, 1977
- Photoelectric Spectroscopy – A New Method of Analysis of Impurities in SemiconductorsPhysica Status Solidi (a), 1977
- Two types of far-infrared photoconductivity in antimony-doped germaniumSolid State Communications, 1969