High-rate sputter deposition of SiO2 and TiO2 films for optical applications

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Abstract
This paper describes a process to produce SiO2 and TiO2 films at high rates of deposition by using chemically reactive gases (etch gases). Experiments were conducted using Cl2, CCl4, CCl3F, CClF3, and H2 mixed individually in Ar and O2 plasma in a magnetron sputtering process. Oxide films were deposited on glass and Si substrates from sputter-etching of Si, SiO2, Ti, and TiO2 targets. An attempt was made to understand the mechanism involved in the increased rate of deposition. The results showed that considerable enhancement of the rate of deposition was obtained for SiO2 and TiO2 films when sputtered from their pure elemental targets. The enhancement in the rate of deposition ranged between 5 and 30 times over that obtained in a conventional reactive sputtering process. The analysis of the process during sputtering indicated that deposition was accompanied by the formation of volatile chlorides resulting from the chemical etching of the targets. In most cases the coatings had refractive indices close to those of the bulk SiO2 and TiO2, the films were clear and had good resistance to scratching. However, at high concentrations of the etch gases, the optical and scratch properties of the films deteriorated.

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