Characterization of InP Grown by OMVPE Using Tertiary-butylphosphine for the Phosphorous Source

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Abstract
InP layers were grown by organometallic vapor phase epitaxy (OMVPE) at atmospheric pressure using trimethylindium (TMI) and tertiarybutylphosphine (TBP) as source gases. Specular surfaces were obtained at growth temperatures between 550°C and 600°C and at the V/III ratio of 79. Electrical and optical characterizations were carried out to elucidate the behavior of unintentionally doped impurities in the grown layers. All the epitaxial layers showed n-type conductivity. The highest electron Hall mobilities were 3800 cm2V-1s-1 at 300 K and 12000 cm2V-1s-1 at 77 K with the electron concentrations of 7.5×1015 cm-3 and 6.8×1015 cm-3, respectively. Possible impurity sources were discussed.