A new compact model for junctions in advanced CMOS technologies

Publisher Website

7 April 2006

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/iedm.2005.1609306

Abstract

No abstract available

Keywords

This publication has 2 references indexed in Scilit:

A new recombination model for device simulation including tunneling
IEEE Transactions on Electron Devices, 1992
On the modelling of tunnelling currents in reverse-biased p-n junctions
Solid-State Electronics, 1989