Interaction of oxygen with evaporated silicon films. An infrared study
- 1 January 1980
- journal article
- research article
- Published by Royal Society of Chemistry (RSC) in Journal of the Chemical Society, Faraday Transactions 1: Physical Chemistry in Condensed Phases
- Vol. 76, 630-636
- https://doi.org/10.1039/f19807600630
Abstract
Spectra due to adsorbed oxygen species have been observed between 1200 and 600 cm–1. A pair of bands, at 970 and 730 cm–1, which appear after exposure of silicon to oxygen at ≈ 2 × 10–5 Pa min have been identified tentatively as a peroxide-like surface species. A second pair at 860 and 750 cm–1, which appear at exposures > 100 Pa min, are identified with a surface Si—O—Si group gradually replacing the peroxide-like monolayer species. Similarity in the logarithmic growth of the bulk oxide on silicon and the development of bands at 1130 and 1030 cm–1 allow the identification of interstitial oxygen.Keywords
This publication has 0 references indexed in Scilit: