Characterization of high purity GaAs grown by molecular beam epitaxy
- 15 March 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (6) , 507-510
- https://doi.org/10.1063/1.93159
Abstract
High purity n-type GaAs grown by molecular beam epitaxy has been characterized using the Hall effect, dye laser excited low-temperature luminescence, and far-infrared magnetospectroscopy. Peak mobilities exceed 105 cm2 V−1 s−1. Carbon is shown to be the dominant background acceptor impurity, whereas silicon and two additional, unidentified donors make up the background donor manifold.Keywords
This publication has 10 references indexed in Scilit:
- Recent developments in molecular beam epitaxy (MBE)Journal of Vacuum Science and Technology, 1979
- Two-dimensional electron gas at a semiconductor-semiconductor interfaceSolid State Communications, 1979
- Nonalloyed Ohmic contacts to n-GaAs by molecular beam epitaxyApplied Physics Letters, 1978
- Excitation intensity dependence of shallow donor bound exciton luminescence in n-GaAsJournal of Luminescence, 1978
- Study of electron traps in n-GaAs grown by molecular beam epitaxyJournal of Applied Physics, 1976
- The incorporation and characterisation of acceptors in epitaxial GaAsJournal of Physics and Chemistry of Solids, 1975
- Optical and electrical properties of Mn-doped GaAs grown by molecular-beam epitaxyJournal of Applied Physics, 1975
- Polariton Reflectance and Photoluminescence in High-Purity GaAsPhysical Review B, 1973
- The photoluminescence spectrum of bound excitons in indium phosphide and gallium arsenideJournal of Physics C: Solid State Physics, 1972
- Magnetospectroscopy of shallow donors in GaAsSolid State Communications, 1969