Comment on Dual-Hard-Sphere Models for Liquid Semiconductors Si And Ge

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Abstract
Various generalized dual-hard-sphere (DHS) models are reviewed on calculating the liquid structure factor for semiconductor elements Si and Ge. It is found that the model generalized by Canessa, Mariani and Vignolo gives the best fitting of experimental structure factor S exp(k) in the range k > 2kF , (kF , the Fermi wave vector), and all previous models including a new generalized model by the author fail to reproduce the experimental structure factor S exp(k) of Si and Ge in the whole range of k vector.