Memory retention and switching behavior of metal-ferroelectric-semiconductor transistors
- 1 January 1976
- journal article
- research article
- Published by Taylor & Francis in Ferroelectrics
- Vol. 11 (1) , 379-383
- https://doi.org/10.1080/00150197608236584
Abstract
The memory retention and switching behavior of a metal-ferroelectric-semiconductor transistor using bismuth titanate have been investigated. The study made on p-channel transistors shows that the device has a fast switching speed and a switching threshold at a field of about 15 to 20 kV/cm. It also has a good memory retentivity. The low current OFF state is more stable than the high current ON state. The current in the ON state was found to decay logarithmically with time at long elapsed times. This is attributed to a slow trapping of holes at the ferroelectric-semiconductor interface states.Keywords
This publication has 2 references indexed in Scilit:
- A new ferroelectric memory device, metal-ferroelectric-semiconductor transistorIEEE Transactions on Electron Devices, 1974
- The effects of fixed bulk charge on the characteristics of metal-oxide-semiconductor transistorsIEEE Transactions on Electron Devices, 1966