Fabrication of submicron polysilicon lines by conventional techniques
- 1 April 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 26 (7) , 398-399
- https://doi.org/10.1063/1.88192
Abstract
A new method of making fine geometry polysilicon lines has been developed. It requires no special apparatus or critical processing. Silicon gate MOST’s with dimensions of about 1 μm have been fabricated. Applications of the fine geometry MOST’s to the fabrication of high−packing−density MOSIC’s and high−frequency transistors are outlined.Keywords
This publication has 1 reference indexed in Scilit:
- Ethylene Diamine-Pyrocatechol-Water Mixture Shows Etching Anomaly in Boron-Doped SiliconJournal of the Electrochemical Society, 1971