Abstract
The polishing of wafers with bromine/methanol solutions has been studied as a function of bromine concentration. Under our experimental conditions, as the concentration is reduced from 1 to 0.05 volume percent, the polishing rate decreases in a strictly linear fashion from 1.3 to 0.05 μm/min; at the same time, the surface finish improves only by a factor of two. With proper attention to pad conditioning and substrate cleaning, no subsurface damage is found on wafers polished with solutions as dilute as 0.05 volume percent.

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