Increased carrier lifetimes in epitaxial silicon layers on buried silicon nitride produced by ion implantation

10 May 1984

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 20 (10) , 426-427
https://doi.org/10.1049/el:19840295

Abstract

Carrier lifetimes were measured in epitaxial silicon layers deposited on buried silicon nitride produced by high-dose nitrogen implantation at 330 keV. The values were in the range 20–200 μs. The results are remarkable taking into account the high density of crystal defects in the epitaxial layers. Comparing with other SOI technologies the measured lifetimes are higher by 1–2 orders of magnitude.

Keywords

SEMICONDUCTORS
SOI TECHNOLOGIES
BURIED SI3N4
ION IMPLANTATION
SI EPITAXIAL LAYERS
CRYSTAL DEFECTS
CARRIER LIFETIMES

This publication has 0 references indexed in Scilit: