Metal-semiconductor transition in partially compensated Ge:Sb
- 1 April 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 43 (10) , 8679-8681
- https://doi.org/10.1103/physrevb.43.8679
Abstract
The conductivity exponent α=dlnσ/dln(-)≊0.5 for uncompensated shallow donor-impurity bands, but it crosses over to α≊1.0 for partially compensated impurity bands with K=/. I calculate , the crossover compensation, and obtain a result in excellent agreement with experiment.
Keywords
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