Ultrashallow, high doping of boron using molecular layer doping
- 2 April 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (14) , 1334-1335
- https://doi.org/10.1063/1.103180
Abstract
A new doping method named molecular layer doping (MLD) is proposed. MLD is based on surface chemical adsorption of dissolvements from induced dopant gas molecules. Ultrashallow boron-doped layers are successfully achieved by MLD using B2 H6 gas. The p+ n junction formed by MLD exhibits excellent characteristics, with a reverse bias leakage current of less than 2.5×10−16 A/μm2 at 5 V. MLD is attractive in that it offers high-density, shallow-junction, damage-free, selective doping in a short time.Keywords
This publication has 3 references indexed in Scilit:
- On the abundance of molecular ions in secondary ion mass spectrometryApplied Physics A, 1976
- Primary oxygen ion implantation effects on depth profiles by secondary ion emission mass spectrometryApplied Physics Letters, 1973
- Carbide Contamination of Silicon SurfacesJournal of Applied Physics, 1971