Growth of ZnO films by low-pressure organometallic chemical vapor deposition
- 25 November 1993
- journal article
- research article
- Published by Elsevier in Thin Solid Films
- Vol. 235 (1-2) , 20-21
- https://doi.org/10.1016/0040-6090(93)90235-h
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Mechanism of Photoinduced Charge Transfer in Co(Li)-Doped ZnO FilmJapanese Journal of Applied Physics, 1992
- Theoretical Consideration on Photochromism of an Oxide Doped with Transition-Metal Ions in Strong Electric FieldChemistry Letters, 1992
- Zinc oxide thin films prepared by chemical vapour deposition from zinc acetateJournal of Materials Science Letters, 1992
- Optical and electronic properties of cobalt-doped zinc oxide films prepared by the sputtering methodJournal of Materials Science, 1992
- Properties of the Excitonic Emission at Room Temperature in Cd0.3Zn0.7S/ZnS Strained-Layer SuperlatticesJapanese Journal of Applied Physics, 1991
- Growth of Short-Period ZnSe-ZnSxSe1-x Strained-Layer Superlattices by Metalorganic Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1991
- On the use of zinc acetate as a novel precursor for the deposition of ZnO by low-pressure metal-organic chemical vapour depositionThin Solid Films, 1989