Switching of GaAs IMPATT diode oscillator by optical illumination
- 15 July 1977
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (2) , 120-122
- https://doi.org/10.1063/1.89581
Abstract
A study was made of the microwave oscillaton characteristics of GaAs IMPATT diodes under external optical illumination. It was found that depending on the diode’s bias condition, the frequency of oscillation and the intensity of illumination, the IMPATT microwave output power can be either enhanced or reduced.Keywords
This publication has 3 references indexed in Scilit:
- Microwave avalanche diodesProceedings of the IEEE, 1971
- Basic Principles and Properties of Avalanche Transit-Time DevicesIEEE Transactions on Microwave Theory and Techniques, 1970
- A Proposed High-Frequency, Negative-Resistance DiodeBell System Technical Journal, 1958