Amphoteric doping of single-wall carbon-nanotube thin films as probed by optical absorption spectroscopy
- 15 November 1999
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 60 (19) , 13339-13342
- https://doi.org/10.1103/physrevb.60.13339
Abstract
We have separately probed the doping behavior of semiconducting (S) and metallic (M) single-wall carbon-nanotube (SWNT) films, by optical absorption and dc resistance (R) measurements. Either electron acceptors or donors (K, Cs) were used as dopants with controlled stoichiometry. Disappearance of absorption bands at 0.68, 1.2, and 1.8 eV, and concomitant decrease of R by doping have been attributed to electron depletion from or filling to specific bands in S- or M-SWNT’s, demonstrating their amphoteric doping behavior. Changes in the electronic properties are discussed in terms of the charge-transfer mechanism in the framework of the rigid-band model.
Keywords
This publication has 20 references indexed in Scilit:
- Transport properties of alkali-metal-doped single-wall carbon nanotubesPhysical Review B, 1998
- Reversible Intercalation of Charged Iodine Chains into Carbon Nanotube RopesPhysical Review Letters, 1998
- Position of K Atoms in Doped Single-Walled Carbon Nanotube CrystalsPhysical Review Letters, 1998
- Localized and Delocalized Electronic States in Single-Wall Carbon NanotubesPhysical Review Letters, 1998
- Carbon Nanotubes for Next-Generation Electronics DevicesScience, 1997
- Individual single-wall carbon nanotubes as quantum wiresNature, 1997
- Single-Electron Transport in Ropes of Carbon NanotubesScience, 1997
- Electrical conductivity of individual carbon nanotubesNature, 1996
- Pure Carbon Nanoscale Devices: Nanotube HeterojunctionsPhysical Review Letters, 1996
- Helical microtubules of graphitic carbonNature, 1991