Amphoteric doping of single-wall carbon-nanotube thin films as probed by optical absorption spectroscopy

Abstract
We have separately probed the doping behavior of semiconducting (S) and metallic (M) single-wall carbon-nanotube (SWNT) films, by optical absorption and dc resistance (R) measurements. Either electron acceptors (Br2, I2) or donors (K, Cs) were used as dopants with controlled stoichiometry. Disappearance of absorption bands at 0.68, 1.2, and 1.8 eV, and concomitant decrease of R by doping have been attributed to electron depletion from or filling to specific bands in S- or M-SWNT’s, demonstrating their amphoteric doping behavior. Changes in the electronic properties are discussed in terms of the charge-transfer mechanism in the framework of the rigid-band model.