Constraints on the application of 0.5-µm MOSFET's to ULSI systems

1 February 1985

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 32 (2) , 322-327
https://doi.org/10.1109/t-ed.1985.21945

Abstract

The characteristics of a MOSFET with an Leff= 0.5 µm, which is a building element of the next generation of ULSI's, are described from two viewpoints: 1) "deviation" from the scaling law and 2) "system level scaling," and are compared with those of 1.3-, 2-, and 3-µm design rules. In the light of the fact that further improvements in the characteristics of small-sized devices are diminishing, it is mentioned that from now on it will be more necessary to concentrate on the system-oriented approach, rather than device and process technologies. In addition, to aid the selection of a new standard for power supply voltage, the allowable operating bias regions in 0.5-µm devices are discussed.

Keywords

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