X-ray reflectivity determination of interface roughness correlated with transport properties of (AlGa)As/GaAs high electron mobility transistor devices
- 19 August 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (8) , 1134-1136
- https://doi.org/10.1063/1.117082
Abstract
To explore the role of interface scattering in high electron mobility transistor (HEMT) device performance, a series of samples consisting of both a superlattice and a HEMT structure were grown by molecular beam epitaxy (MBE) at temperatures ranging from 500 to 630 °C. Hall measurements indicate a trend toward higher mobilities in samples grown at higher temperatures. Subsequent x-ray reflectivity measurements were made, and the data were fitted by least-squares refinement of a calculated reflectivity curve determined from a model of the sample structure to obtain the composition profile along the growth direction. These results indicate smoother interfaces for the samples with higher mobilities.Keywords
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